High temperature electrode-barriers for ferroelectric and other capacitor structures

Overview

Information

Number
5790366
Application
08/763011
Filing date
12/06/1996
Issue date
08/04/1998
Inventor(s)
Seshu B. Desu, Hemanshu D. Bhatt, Dilip P. Vijay, Yoosang Hwang
US Classification
257/295; 257/306; 257/E21.011; 361/305; 361/311; 361/313; 361/322
View at USPTO

Citations

Ramtron International (2)
FreeScale Semiconductor (1)
North Carolina State University (1)
texas Instruments (1)

Abstract

Abstract

A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer of Pt--Rh, and a top layer of Pt--Rh--O.sub.x. A ferroelectric material such as PZT (or other material) is situated on the bottom electrode. A top electrode, preferably of identical composition as the bottom electrode, is situated on the opposite side of the ferroelectric from the bottom electrode.

Assignees with Similar Patents

texas Instruments (14)
Micron Technology (14)
Sharp (9)
Radiant Technologies (8)
Toshiba (7)

Referenced by

Micron Technology (24)
Sharp (5)
Round Rock Research, (4)
LG Semicon Co. (2)
Sony (2)
Hyundai Electronics Industries CO. (2)
Fujitsu (2)
University of Maryland (1)
Matsushita Electric Industrial co. (1)
Crocus Technology (1)
IHP (1)
International Business Machines (1)
Renesas Electronics (1)
NEC (1)
POLARIS INNOVATIONS LIMITED (1)
ROHM Co. (1)
GLOBALFOUNDRIES U.S. INC. (1)
nexperia b v (1)
L'Air Liquide, A Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procedes Georges Claude (1)
Toshiba (1)
NANYA Technology (1)
Hitachi, (1)

Tech Analysis

Class Subclass Type Reference Factor Citation Factor Strength Grant time Early grant (%)
257 295 Emerging Average Seminal Medium High Average 25.4
257 306 Emerging Average Seminal Medium High Average 25.2
257 E21.011 Emerging Average Seminal Medium High Average 29.7
361 305 Emerging Average Seminal Medium High Average 30.8
361 311 Emerging Average Seminal Medium High Average 31.0
361 313 Emerging Average Seminal Medium High Average 34.1
361 322 Emerging Average Seminal Medium High Average 29.9