Simple method of fabricating ferroelectric capacitors

Overview

Information

Number: 5807774
Application: 08/761804
Filing date: 12/06/1996
Issue date: 09/15/1998
Inventor(s): Seshu B. Desu, Hemanshu D. Bhatt, Dilip P. Vijay

US Classification: 257/E21.009; 257/E21.011; 438/240; 438/3; 438/393; 438/396

Citations

texas Instruments (2)

Number	Title	Issue Date
5554866	Pre-oxidizing high-dielectric-constant material electrodes	1996/09/10
5536672	Fabrication of ferroelectric capacitor and memory cell	1996/07/16

Radiant Technologies (2)

Number	Title	Issue Date
5453347	Method for constructing ferroelectric capacitors on integrated circuit substrates	1995/09/26
5593914	Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces	1997/01/14

North Carolina State University (1)

Number	Title	Issue Date
5555486	Hybrid metal/metal oxide electrodes for ferroelectric capacitors	1996/09/10

Nec Electronics (1)

Number	Title	Issue Date
5486713	Semiconductor device having a capacitor	1996/01/23

FreeScale Semiconductor (1)

Number	Title	Issue Date
5407855	Process for forming a semiconductor device having a reducing/oxidizing conductive material	1995/04/18

Entegris (1)

Number	Title	Issue Date
5581436	High-dielectric-constant material electrodes comprising thin platinum layers	1996/12/03

SamSung Electronics Co. (1)

Number	Title	Issue Date
5618746	Method for manufacturing a capacitor of semiconductor device having diffusion-blocking films	1997/04/08

Abstract

Abstract

A ferroelectric capacitor device and method of manufacture. A substrate supports a bottom electrode structure, with an adhesion/diffusion barrier layer sandwiched therebetween. The electrode layer includes a metal or metal alloy and an oxide of the metal or alloy. The adhesion/diffusion barrier layer is a similar oxide. Ferroelectric material is sandwiched between a top electrode. The top layer includes a metal or metal alloy and an oxide of the same; the metal or metal alloy may be the same as the bottom electrode but need not be. The metal and metal oxide electrodes may be deposited by known deposition techniques, or the metal may be deposited and the oxide formed by annealing in oxygen ambient environment.

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Matsushita Electric Industrial co. (6)

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Referenced by

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SamSung Electronics Co. (5)

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Fujitsu (3)

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Avago Technologies General IP PTE. (2)

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6734477	Fabricating an embedded ferroelectric memory cell	2004/05/11

GLOBALFOUNDRIES (1)

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Hyundai Electronics Industries CO. (1)

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Murata Manufacturing Co. (1)

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Nichia (1)

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NEC (1)

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Lapis Semiconductor (1)

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Chartered Semiconductor Manufacturing (1)

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Advanced Technology Materials (1)

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International Business Machines (1)

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Hitachi Global Storage Technologies Netherlands B.V. (1)

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Tech Analysis

Class	Subclass	Type	Reference Factor	Citation Factor	Strength	Grant time	Early grant (%)
257	E21.009	Emerging	Average	Seminal	Medium	Average	33.2
257	E21.011	Emerging	Average	Seminal	Medium	Average	33.7
438	240	Emerging	Average	Seminal	Medium	Average	34.6
438	3	Emerging	Average	Seminal	Medium	Average	36.8
438	393	Stable	Average	Seminal	Medium	Average	34.3
438	396	Emerging	Average	Seminal	Medium	Average	39.5