Simple method of fabricating ferroelectric capacitors

Overview

Information

Number: 5807774
Application: 08/761804
Filing date: 12/06/1996
Issue date: 09/15/1998
Inventor(s): Seshu B. Desu, Hemanshu D. Bhatt, Dilip P. Vijay

US Classification: 257/E21.009; 257/E21.011; 438/240; 438/3; 438/393; 438/396

Citations

texas Instruments (2)

Number	Title	Issue Date
5554866	Pre-oxidizing high-dielectric-constant material electrodes	1996/09/10
5536672	Fabrication of ferroelectric capacitor and memory cell	1996/07/16

Radiant Technologies (2)

Number	Title	Issue Date
5453347	Method for constructing ferroelectric capacitors on integrated circuit substrates	1995/09/26
5593914	Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces	1997/01/14

North Carolina State University (1)

Number	Title	Issue Date
5555486	Hybrid metal/metal oxide electrodes for ferroelectric capacitors	1996/09/10

Nec Electronics (1)

Number	Title	Issue Date
5486713	Semiconductor device having a capacitor	1996/01/23

FreeScale Semiconductor (1)

Number	Title	Issue Date
5407855	Process for forming a semiconductor device having a reducing/oxidizing conductive material	1995/04/18

Entegris (1)

Number	Title	Issue Date
5581436	High-dielectric-constant material electrodes comprising thin platinum layers	1996/12/03

SamSung Electronics Co. (1)

Number	Title	Issue Date
5618746	Method for manufacturing a capacitor of semiconductor device having diffusion-blocking films	1997/04/08

Abstract

Abstract

A ferroelectric capacitor device and method of manufacture. A substrate supports a bottom electrode structure, with an adhesion/diffusion barrier layer sandwiched therebetween. The electrode layer includes a metal or metal alloy and an oxide of the metal or alloy. The adhesion/diffusion barrier layer is a similar oxide. Ferroelectric material is sandwiched between a top electrode. The top layer includes a metal or metal alloy and an oxide of the same; the metal or metal alloy may be the same as the bottom electrode but need not be. The metal and metal oxide electrodes may be deposited by known deposition techniques, or the metal may be deposited and the oxide formed by annealing in oxygen ambient environment.

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Matsushita Electric Industrial co. (6)

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Referenced by

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6646298	Capacitor with oxygenated metal electrodes and high dielectric constant materials	2003/11/11
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CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. (8)

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6524867	Method for forming platinum-rhodium stack as an oxygen barrier	2003/02/25
6740554	Methods to form rhodium-rich oxygen barriers	2004/05/25
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SamSung Electronics Co. (5)

Number	Title	Issue Date
6075264	Structure of a ferroelectric memory cell and method of fabricating it	2000/06/13
6337216	Methods of forming ferroelectric memory cells	2002/01/08
6376325	Method for fabricating a ferroelectric device	2002/04/23
7745233	Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same	2010/06/29
7459736	Ferroelectric capacitor and ferroelectric memory with Ir-Ru alloy electrode and method of manufacturing the same	2008/12/02

Round Rock Research, (4)

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Fujitsu (3)

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Entegris (2)

Number	Title	Issue Date
7858816	Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta.sub.20.sub.5 thin films	2010/12/28
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Sony (2)

Number	Title	Issue Date
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6355492	Process for the manufacturing of oxide electrodes for ferroelectric capacitor	2002/03/12

Avago Technologies General IP PTE. (2)

Number	Title	Issue Date
6734477	Fabricating an embedded ferroelectric memory cell	2004/05/11
6709875	Contamination control for embedded ferroelectric device fabrication processes	2004/03/23

GLOBALFOUNDRIES (1)

Number	Title	Issue Date
6188120	Method and materials for through-mask electroplating and selective base removal	2001/02/13

Hyundai Electronics Industries CO. (1)

Number	Title	Issue Date
6232133	Method for fabricating a capacitor of semiconductor memory device	2001/05/15

Murata Manufacturing Co. (1)

Number	Title	Issue Date
6350644	Ferroelectric thin-film device and method for producing the same	2002/02/26

Nichia (1)

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6921928	Nitride semiconductor element	2005/07/26

NEC (1)

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6333537	Thin film capacitor with an improved top electrode	2001/12/25

Lapis Semiconductor (1)

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6403441	Method for fabricating storage capacitor using high dielectric constant material	2002/06/11

Chartered Semiconductor Manufacturing (1)

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Advanced Technology Materials (1)

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International Business Machines (1)

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Hitachi Global Storage Technologies Netherlands B.V. (1)

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MARIANA HDD B.V. (1)

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6460243	Method of making low stress and low resistance rhodium (RH) leads	2002/10/08

NANYA Technology (1)

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Tech Analysis

Class	Subclass	Type	Reference Factor	Citation Factor	Strength	Grant time	Early grant (%)
257	E21.009	Emerging	Average	Seminal	Medium	Average	33.2
257	E21.011	Emerging	Average	Seminal	Medium	Average	33.7
438	240	Emerging	Average	Seminal	Medium	Average	34.6
438	3	Emerging	Average	Seminal	Medium	Average	36.8
438	393	Stable	Average	Seminal	Medium	Average	34.3
438	396	Emerging	Average	Seminal	Medium	Average	39.5