Simple method of fabricating ferroelectric capacitors

Overview

Information

Number
5807774
Application
08/761804
Filing date
12/06/1996
Issue date
09/15/1998
Inventor(s)
Seshu B. Desu, Hemanshu D. Bhatt, Dilip P. Vijay
US Classification
257/E21.009; 257/E21.011; 438/240; 438/3; 438/393; 438/396
View at USPTO

Citations

texas Instruments (2)
Radiant Technologies (2)
North Carolina State University (1)
Nec Electronics (1)
FreeScale Semiconductor (1)
Entegris (1)
SamSung Electronics Co. (1)

Abstract

Abstract

A ferroelectric capacitor device and method of manufacture. A substrate supports a bottom electrode structure, with an adhesion/diffusion barrier layer sandwiched therebetween. The electrode layer includes a metal or metal alloy and an oxide of the metal or alloy. The adhesion/diffusion barrier layer is a similar oxide. Ferroelectric material is sandwiched between a top electrode. The top layer includes a metal or metal alloy and an oxide of the same; the metal or metal alloy may be the same as the bottom electrode but need not be. The metal and metal oxide electrodes may be deposited by known deposition techniques, or the metal may be deposited and the oxide formed by annealing in oxygen ambient environment.

Assignees with Similar Patents

SamSung Electronics Co. (19)
Fujitsu (7)
rpx clearinghouse (6)
International Business Machines (6)
Matsushita Electric Industrial co. (6)

Referenced by

Micron Technology (14)
CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC. (8)
SamSung Electronics Co. (5)
Round Rock Research, (4)
Sharp (3)
Fujitsu (3)
Entegris (2)
Sony (2)
Avago Technologies General IP PTE. (2)
GLOBALFOUNDRIES (1)
Hyundai Electronics Industries CO. (1)
Murata Manufacturing Co. (1)
Nichia (1)
NEC (1)
Lapis Semiconductor (1)
Chartered Semiconductor Manufacturing (1)
Advanced Technology Materials (1)
International Business Machines (1)
Hitachi Global Storage Technologies Netherlands B.V. (1)
MARIANA HDD B.V. (1)
NANYA Technology (1)

Tech Analysis

Class Subclass Type Reference Factor Citation Factor Strength Grant time Early grant (%)
257 E21.009 Emerging Average Seminal Medium Average 33.2
257 E21.011 Emerging Average Seminal Medium Average 33.7
438 240 Emerging Average Seminal Medium Average 34.6
438 3 Emerging Average Seminal Medium Average 36.8
438 393 Stable Average Seminal Medium Average 34.3
438 396 Emerging Average Seminal Medium Average 39.5