Simple method of fabricating ferroelectric capacitors
Overview
Citations
- texas Instruments (2)
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Number |
Title |
Issue Date |
5554866 |
Pre-oxidizing high-dielectric-constant material electrodes |
1996/09/10 |
5536672 |
Fabrication of ferroelectric capacitor and memory cell |
1996/07/16 |
- Radiant Technologies (2)
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Number |
Title |
Issue Date |
5453347 |
Method for constructing ferroelectric capacitors on integrated circuit substrates |
1995/09/26 |
5593914 |
Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces |
1997/01/14 |
- North Carolina State University (1)
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Number |
Title |
Issue Date |
5555486 |
Hybrid metal/metal oxide electrodes for ferroelectric capacitors |
1996/09/10 |
- Nec Electronics (1)
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Number |
Title |
Issue Date |
5486713 |
Semiconductor device having a capacitor |
1996/01/23 |
- FreeScale Semiconductor (1)
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Number |
Title |
Issue Date |
5407855 |
Process for forming a semiconductor device having a reducing/oxidizing conductive material |
1995/04/18 |
- Entegris (1)
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Number |
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Issue Date |
5581436 |
High-dielectric-constant material electrodes comprising thin platinum layers |
1996/12/03 |
- SamSung Electronics Co. (1)
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Number |
Title |
Issue Date |
5618746 |
Method for manufacturing a capacitor of semiconductor device having diffusion-blocking films |
1997/04/08 |
Abstract
Abstract
A ferroelectric capacitor device and method of manufacture. A substrate supports a bottom electrode structure, with an adhesion/diffusion barrier layer sandwiched therebetween. The electrode layer includes a metal or metal alloy and an oxide of the metal or alloy. The adhesion/diffusion barrier layer is a similar oxide. Ferroelectric material is sandwiched between a top electrode. The top layer includes a metal or metal alloy and an oxide of the same; the metal or metal alloy may be the same as the bottom electrode but need not be. The metal and metal oxide electrodes may be deposited by known deposition techniques, or the metal may be deposited and the oxide formed by annealing in oxygen ambient environment.
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Tech Analysis
Class |
Subclass |
Type |
Reference Factor |
Citation Factor |
Strength |
Grant time |
Early grant (%) |
257
|
E21.009
|
Emerging |
Average |
Seminal |
Medium |
Average |
33.2 |
257
|
E21.011
|
Emerging |
Average |
Seminal |
Medium |
Average |
33.7 |
438
|
240
|
Emerging |
Average |
Seminal |
Medium |
Average |
34.6 |
438
|
3
|
Emerging |
Average |
Seminal |
Medium |
Average |
36.8 |
438
|
393
|
Stable |
Average |
Seminal |
Medium |
Average |
34.3 |
438
|
396
|
Emerging |
Average |
Seminal |
Medium |
Average |
39.5 |