Referenced by

Micron Technology (24)

Number	Title	Issue Date
6660631	Devices containing platinum-iridium films and methods of preparing such films and devices	2003/12/09
6297527	Multilayer electrode for ferroelectric and high dielectric constant capacitors	2001/10/02
6400552	Capacitor with conductively doped Si-Ge alloy electrode	2002/06/04
6407452	Integrated circuitry and method of restricting diffusion from one material to another	2002/06/18
6995419	Semiconductor constructions having crystalline dielectric layers	2006/02/07
6900497	Integrated circuit with a capacitor comprising an electrode	2005/05/31
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6891217	Capacitor with discrete dielectric material	2005/05/10
6627508	Method of forming capacitors containing tantalum	2003/09/30
6282080	Semiconductor circuit components and capacitors	2001/08/28
6690055	Devices containing platinum-rhodium layers and methods	2004/02/10
6730559	Capacitors and methods of forming capacitors	2004/05/04
6777739	Multilayer electrode for a ferroelectric capacitor	2004/08/17
6773981	Methods of forming capacitors	2004/08/10
6744093	Multilayer electrode for a ferroelectric capacitor	2004/06/01
6746916	Method for forming a multilayer electrode for a ferroelectric capacitor	2004/06/08
7393785	Methods and apparatus for forming rhodium-containing layers	2008/07/01
6255186	Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom	2001/07/03
6239459	Capacitors, methods of forming capacitors and integrated circuitry	2001/05/29
7166885	Semiconductor devices	2007/01/23
6191443	Capacitors, methods of forming capacitors, and DRAM memory cells	2001/02/20
7217970	Devices containing platinum-iridium films and methods of preparing such films and devices	2007/05/15
7226861	Methods and apparatus for forming rhodium-containing layers	2007/06/05
6156638	Integrated circuitry and method of restricting diffusion from one material to another	2000/12/05

Sharp (5)

Number	Title	Issue Date
6046469	Semiconductor storage device having a capacitor and a MOS transistor	2000/04/04
6759250	Deposition method for lead germanate ferroelectric structure with multi-layered electrode	2004/07/06
6420740	Lead germanate ferroelectric structure with multi-layered electrode	2002/07/16
6201271	Semiconductor memory device prevented from deterioration due to activated hydrogen	2001/03/13
6180974	Semiconductor storage device having a capacitor electrode formed of at least a platinum-rhodium oxide	2001/01/30

Round Rock Research, (4)

Number	Title	Issue Date
6953721	Methods of forming a capacitor with an amorphous and a crystalline high K capacitor dielectric region	2005/10/11
7005695	Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region	2006/02/28
6165834	Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell	2000/12/26
7446363	Capacitor including a percentage of amorphous dielectric material and a percentage of crystalline dielectric material	2008/11/04

Sony (2)

Number	Title	Issue Date
6043561	Electronic material, its manufacturing method, dielectric capacitor, non-volatile memory and semiconductor device	2000/03/28
6407422	Oxygen diffusion blocking semiconductor capacitor	2002/06/18

Hyundai Electronics Industries CO. (2)

Number	Title	Issue Date
6232133	Method for fabricating a capacitor of semiconductor memory device	2001/05/15
6184927	Methods of forming ferroelectric capacitors having a diffusion barrier layer	2001/02/06

Fujitsu (2)

Number	Title	Issue Date
6740533	Semiconductor device having a ferroelectric capacitor and fabrication process thereof	2004/05/25
6624458	Semiconductor device having a ferroelectric capacitor and fabrication process thereof	2003/09/23

LG Semicon Co. (2)

Number	Title	Issue Date
6096593	Method of fabricating capacitor of semiconductor device	2000/08/01
6071787	Method of forming a capacitor including forming a first and second conductive layers and etching layers to form alloyed conductive sidewall spacers	2000/06/06

NEC (1)

Number	Title	Issue Date
6146906	DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor	2000/11/14

Toshiba (1)

Number	Title	Issue Date
6144546	Capacitor having electrodes with two-dimensional conductivity	2000/11/07

L'Air Liquide, A Directoire et Conseil de Surveillance pour l'Etude et l'Exploitation des Procedes Georges Claude (1)

Number	Title	Issue Date
6743678	Methods for manufacturing semiconductor memory devices	2004/06/01

Matsushita Electric Industrial co. (1)

Number	Title	Issue Date
7015564	Capacitive element and semiconductor memory device	2006/03/21

Renesas Electronics (1)

Number	Title	Issue Date
6627497	Semiconductor integrated circuit device and method of manufacturing the same	2003/09/30

Crocus Technology (1)

Number	Title	Issue Date
9515251	Structure for thermally assisted MRAM	2016/12/06

International Business Machines (1)

Number	Title	Issue Date
9515251	Structure for thermally assisted MRAM	2016/12/06

Hitachi, (1)

Number	Title	Issue Date
6583463	Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulator	2003/06/24

University of Maryland (1)

Number	Title	Issue Date
6274388	Annealing of a crystalline perovskite ferroelectric cell	2001/08/14

ROHM Co. (1)

Number	Title	Issue Date
6631479	Data processing system, data processor and data processing method	2003/10/07

IHP (1)

Number	Title	Issue Date
7113388	Semiconductor capacitor with praseodymium oxide as dielectric	2006/09/26

NANYA Technology (1)

Number	Title	Issue Date
6162744	Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers	2000/12/19

nexperia b v (1)

Number	Title	Issue Date
6125027	Component comprising a capacitor	2000/09/26

POLARIS INNOVATIONS LIMITED (1)

Number	Title	Issue Date
8344438	Electrode of an integrated circuit	2013/01/01

GLOBALFOUNDRIES U.S. INC. (1)

Number	Title	Issue Date
8809827	Thermally assisted MRAM with multilayer strap and top contact for low thermal conductivity	2014/08/19