Simple method of fabricating ferroelectric capacitors
Overview
Citations
- Radiant Technologies (2)
-
| Number |
Title |
Issue Date |
| 5453347 |
Method for constructing ferroelectric capacitors on integrated circuit substrates |
1995/09/26 |
| 5593914 |
Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces |
1997/01/14 |
- texas Instruments (2)
-
| Number |
Title |
Issue Date |
| 5536672 |
Fabrication of ferroelectric capacitor and memory cell |
1996/07/16 |
| 5554866 |
Pre-oxidizing high-dielectric-constant material electrodes |
1996/09/10 |
- SamSung Electronics Co. (1)
-
| Number |
Title |
Issue Date |
| 5618746 |
Method for manufacturing a capacitor of semiconductor device having diffusion-blocking films |
1997/04/08 |
- FreeScale Semiconductor (1)
-
| Number |
Title |
Issue Date |
| 5407855 |
Process for forming a semiconductor device having a reducing/oxidizing conductive material |
1995/04/18 |
- Nec Electronics (1)
-
| Number |
Title |
Issue Date |
| 5486713 |
Semiconductor device having a capacitor |
1996/01/23 |
- North Carolina State University (1)
-
| Number |
Title |
Issue Date |
| 5555486 |
Hybrid metal/metal oxide electrodes for ferroelectric capacitors |
1996/09/10 |
- Entegris (1)
-
| Number |
Title |
Issue Date |
| 5581436 |
High-dielectric-constant material electrodes comprising thin platinum layers |
1996/12/03 |
Abstract
Abstract
A ferroelectric capacitor device and method of manufacture. A substrate supports a bottom electrode structure, with an adhesion/diffusion barrier layer sandwiched therebetween. The electrode layer includes a metal or metal alloy and an oxide of the metal or alloy. The adhesion/diffusion barrier layer is a similar oxide. Ferroelectric material is sandwiched between a top electrode. The top layer includes a metal or metal alloy and an oxide of the same; the metal or metal alloy may be the same as the bottom electrode but need not be. The metal and metal oxide electrodes may be deposited by known deposition techniques, or the metal may be deposited and the oxide formed by annealing in oxygen ambient environment.
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- Fujitsu (3)
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- Sony (2)
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- Avago Technologies General IP PTE. (2)
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- Murata Manufacturing Co. (1)
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- International Business Machines (1)
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- MARIANA HDD B.V. (1)
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- Hyundai Electronics Industries CO. (1)
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| Number |
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- Nichia (1)
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| Number |
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- NANYA Technology (1)
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| Number |
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Issue Date |
| 6162744 |
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2000/12/19 |
- Lapis Semiconductor (1)
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| Number |
Title |
Issue Date |
| 6403441 |
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- Chartered Semiconductor Manufacturing (1)
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| Number |
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| 6429088 |
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- Hitachi Global Storage Technologies Netherlands B.V. (1)
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| Number |
Title |
Issue Date |
| 6460243 |
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2002/10/08 |
Tech Analysis
| Class |
Subclass |
Type |
Reference Factor |
Citation Factor |
Strength |
Grant time |
Early grant (%) |
|
257
|
E21.009
|
Emerging |
Average |
Seminal |
Medium |
Average |
33.2 |
|
257
|
E21.011
|
Emerging |
Average |
Seminal |
Medium |
Average |
33.7 |
|
438
|
240
|
Emerging |
Average |
Seminal |
Medium |
Average |
34.6 |
|
438
|
3
|
Emerging |
Average |
Seminal |
Medium |
Average |
36.8 |
|
438
|
393
|
Stable |
Average |
Seminal |
Medium |
Average |
34.3 |
|
438
|
396
|
Emerging |
Average |
Seminal |
Medium |
Average |
39.5 |